A transistor made from bilayer A-type antiferromagnet CrPS4 provides control over the spin polarization at the Fermi level and magnetoelectric readout.
This is a preview of subscription content, access via your institution
Access options
Access through your institution
Change institution
Buy or subscribe
Access Nature and 54 other Nature Portfolio journals
Get Nature+, our best-value online-access subscription
$29.99 / 30 days
cancel any time
Learn more
Subscribe to this journal
Receive 12 print issues and online access
$259.00 per year
only $21.58 per issue
Learn more
Buy this article
Purchase on SpringerLink
Instant access to full article PDF
Buy now
Prices may be subject to local taxes which are calculated during checkout
Additional access options:
Log in
Learn about institutional subscriptions
Read our FAQs
Contact customer support
Fig. 1: Electric field effect on the spin- and layer-resolved band properties of a bilayer A-type antiferromagnetic semiconductor.
References
Jungwirth, T., Marti, X., Wadley, P. & Wunderlich, J. Nat. Nanotechnol. 11, 231–241 (2016).
ArticlePubMedCASGoogle Scholar
Heron, J. T. et al. Nature 516, 370–373 (2014).
ArticlePubMedCASGoogle Scholar
Yao, F. et al. Nat. Nanotechnol.https://doi.org/10.1038/s41565-025-01872-w (2025).
ArticlePubMedGoogle Scholar
Néel, L. Magnetism and the local molecular field. NobelPrize.org (11 December 1970); https://www.nobelprize.org/prizes/physics/1970/neel/lecture/
Wadley, P. et al. Science 351, 587–590 (2024).
ArticleGoogle Scholar
Ni, Z. et al. Nat. Nanotechnol. 16, 782–787 (2021).
ArticlePubMedCASGoogle Scholar
Pickett, W. E. & Moodera, J. S. Phys. Today 54, 39–44 (2001).
ArticleCASGoogle Scholar
Gong, S.-J. et al. Proc. Natl Acad. Sci. 115, 8511–8516 (2018).
ArticlePubMedPubMed CentralCASGoogle Scholar
Jiang, S., Shan, J. & Mak, K. F. Nat. Mater. 17, 406–410 (2018).
ArticlePubMedCASGoogle Scholar
Download references
Author information
Authors and Affiliations
Engineering Research Center of Nanophotonics & Advanced Instrument, Department of Physics, School of Physics and Electronic Science, East China Normal University, Shanghai, China
Shi-Jing Gong
Department of Electrical & Computer Engineering and Quantum Technology Center, University of Maryland, College Park, MD, USA
Cheng Gong
Authors
Shi-Jing Gong
View author publications
You can also search for this author in PubMedGoogle Scholar
2. Cheng Gong
View author publications
You can also search for this author in PubMedGoogle Scholar
Corresponding authors
Correspondence to Shi-Jing Gong or Cheng Gong.
Ethics declarations
Competing interests
The authors declare no competing interests.
Rights and permissions
Reprints and permissions
About this article
Check for updates. Verify currency and authenticity via CrossMark
Cite this article
Gong, SJ., Gong, C. Electrically activating two-dimensional antiferromagnets. Nat. Nanotechnol. (2025). https://doi.org/10.1038/s41565-025-01884-6
Download citation
Published:14 March 2025
DOI:https://doi.org/10.1038/s41565-025-01884-6
Share this article
Anyone you share the following link with will be able to read this content:
Get shareable link
Sorry, a shareable link is not currently available for this article.
Copy to clipboard
Provided by the Springer Nature SharedIt content-sharing initiative