Abstract
The power and energy consumption of resistive switching devices can be lowered by reducing the dimensions of their active layers. Efforts to push this low-energy switching property to its limits have led to the investigation of active regions made with two-dimensional (2D) layered materials. Despite their small dimensions, 2D layered materials exhibit a rich variety of switching mechanisms, each involving different types of atomic structure reconfiguration. In this Review, we highlight and classify the mechanisms of resistive switching in monolayer and bulk 2D layered materials, with a subsequent focus on those occurring in a monolayer and/or localized to point defects in the crystalline sheet. We discuss the complex energetics involved in these fundamentally defect-assisted processes, including the coexistence of multiple mechanisms and the effects of the contacts used. Examining the highly localized ‘atomristor’-type switching, we provide insights into atomic motions and electronic transport across the metal–2D interfaces underlying their operation. Finally, we discuss progress and our perspective on the challenges associated with the development of 2D resistive switching devices. Promising application areas and material systems are identified and suggested for further research.
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Fig. 1: Operation, structure and mechanisms of 2DLM RS devices.
Fig. 2: Structural transitions leading to RS in hBN and TMDC devices.
Fig. 3: Mechanisms of RS at the electrode–monolayer 2H MoS2 interface.
Fig. 4: Device performance and scaling trends for vertical 2DLM RS device stacks made with mono- or multilayer active areas.
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Acknowledgements
M.K., M.M. and M.L. acknowledge funding from the ALMOND SNSF Sinergia project (grant number 198612), the NCCR MARVEL (grant number 205602) and the Werner Siemens Stiftung Center for Single Atom Electronics and Photonics and thank the Swiss National Supercomputing Center (CSCS) for computational resources under project s1119. M.K. acknowledges the Natural Sciences and Engineering Research Council of Canada (NSERC) Postgraduate Scholarship (grant number PGS-D3). D.A. acknowledges the support of the National Science Foundation (NSF) under grant number 2422934 and the Office of Naval Research (ONR) under grant number N00014-24-1-2080. Y.-R.J. acknowledges the support of Samsung.
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ETH Zurich, Department of Electrical Engineering and Information Technology, Zurich, Switzerland
M. Kaniselvan, M. Mladenović & M. Luisier
The University of Texas at Austin, Department of Electrical and Computer Engineering, Austin, TX, USA
Y.-R. Jeon & D. Akinwande
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M. Kaniselvan
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D.A. and M.L. initiated and supervised the preparation of this paper. M.K. led the writing and design of the figures, with input and discussion from all authors. Y.-R.J. collected data for Fig. 4 and M.M. performed the nudged elastic band simulations shown in Fig. 3.
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Kaniselvan, M., Jeon, YR., Mladenović, M. et al. Mechanisms of resistive switching in two-dimensional monolayer and multilayer materials. Nat. Mater. (2025). https://doi.org/10.1038/s41563-025-02170-5
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Received:08 May 2024
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DOI:https://doi.org/10.1038/s41563-025-02170-5
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